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1N4937-E3 датащи(PDF) 1 Page - Vishay Siliconix |
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1N4937-E3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 5 page 1N4933, 1N4934, 1N4935, 1N4936, 1N4937 www.vishay.com Vishay General Semiconductor Revision: 24-Jul-13 1 Document Number: 88508 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. Note • These devices are not AEC-Q101 qualified. MECHANICAL DATA Case: DO-204AL, molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V IFSM 30 A trr 200 ns IR 5.0 μA VF 1.2 V TJ max. 150 °C Package DO-204AL (DO-41) Diode variation Single die DO-204AL (DO-41) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N4933 1N4934 1N4935 1N4936 1N4937 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 V Maximum RMS voltage VRMS 35 70 145 280 420 V Maximum DC blocking voltage VDC 50 100 200 400 600 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA= 75 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum reverse recovery current IRM 2.0 A Operating junction and storage temperature range TJ, TSTG - 50 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL 1N4933 1N4934 1N4935 1N4936 1N4937 UNIT Maximum instantaneous forward voltage 1.0 A VF 1.2 V Maximum DC reverse current at rated DC blocking voltage TA= 25 °C IR 5.0 μA TA= 100 °C 100 Maximum reverse recovery time IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM trr 200 ns Typical junction capacitance 4.0 V, 1 MHz CJ 12 pF |
Аналогичный номер детали - 1N4937-E3 |
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Аналогичное описание - 1N4937-E3 |
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