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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KSE702 датащи(PDF) 1 Page - Fairchild Semiconductor |
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KSE702 датащи(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Sym- bol Parameter Value Unit s VCBO Collector- Base Voltage : KSE700/701 : KSE702/703 - 60 - 80 V V VCEO Collector-Emitter Voltage : KSE700/701 : KSE702/703 - 60 - 80 V V VEBO Emitter- Base Voltage - 5 V IC Collector Current - 4 A IB Base Current - 0.1 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage : KSE700/701 : KSE702/703 IC = - 10mA, IB = 0 -60 -80 V V ICEO Collector Cut-off Current : KSE700/701 : KSE702/703 VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 -100 -100 µA µA ICBO Collector Cut-off Current VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 @TC = 100°C -100 -500 µA µA IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 -2 mA hFE DC Current Gain : KSE700/702 : KSE701/703 : ALL DEVICES VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A 750 750 100 VCE(sat) Collector-Emitter Saturation Voltage : KSE700/702 : KSE701/703 : ALL DEVICES IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = - 40mA -2.5 -2.8 -3 V V V VBE(on) Base-Emitter On Voltage : KSE700/702 : KSE701/703 : ALL DEVICES VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A -1.2 -2.5 -3 V V V KSE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 R110k Ω ≅ R20.6k Ω ≅ Equivalent Circuit B E C R1 R2 1 TO-126 1. Emitter 2.Collector 3.Base |
Аналогичный номер детали - KSE702 |
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Аналогичное описание - KSE702 |
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