BD249B datasheet(1/4 Pages) BOURNS

номер детали	BD249B

подробное описание детали	NPN SILICON POWER TRANSISTORS

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производитель	BOURNS [Bourns Electronic Solutions]

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BD249, BD249A, BD249B, BD249C

NPN SILICON POWER TRANSISTORS

P RO D UCT

INFORMA TION

1

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

● Designed for Complementary Use with the

BD250 Series

● 125 W at 25°C Case Temperature

● 25 A Continuous Collector Current

● 40 A Peak Collector Current

● Customer-Specified Selections Available

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,

VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.

RATING

SYMBOL

VALUE

UNIT

Collector-emitter voltage (RBE = 100 Ω)

BD249

BD249A

BD249B

BD249C

VCER

55

70

90

115

V

Collector-emitter voltage (IC = 30 mA)

BD249

BD249A

BD249B

BD249C

VCEO

45

60

80

100

V

Emitter-base voltage

VEBO

5V

Continuous collector current

IC

25

A

Peak collector current (see Note 1)

ICM

40

A

Continuous base current

IB

5A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Ptot

125

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Ptot

3W

Unclamped inductive load energy (see Note 4)

½LIC

2

90

mJ

Operating junction temperature range

Tj

-65 to +150

°C

Storage temperature range

Tstg

-65 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

TL

250

°C

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

B

C

E

1

2

3

OBSOLET

E

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