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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6216PBF датащи(PDF) 2 Page - International Rectifier |
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IRF6216PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF6216PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 2.7 ––– ––– S VDS = -50V, ID = -1.3A Qg Total Gate Charge ––– 33 49 ID = -1.3A Qgs Gate-to-Source Charge ––– 7.2 11 nC VDS = -120V Qgd Gate-to-Drain ("Miller") Charge ––– 15 23 VGS = -10V, td(on) Turn-On Delay Time ––– 18 ––– VDD = -75V tr Rise Time ––– 15 ––– ID = -1.3A td(off) Turn-Off Delay Time ––– 33 ––– RG = 6.5Ω tf Fall Time ––– 26 ––– VGS = -10V Ciss Input Capacitance ––– 1280 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1290 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 99 ––– VGS = 0V, VDS = -120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 220 ––– VGS = 0V, VDS = 0V to -120V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 200 mJ IAR Avalanche Current ––– -4.0 A Avalanche Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -1.3A, VGS = 0V trr Reverse Recovery Time ––– 80 120 nS TJ = 25°C, IF = -1.3A Qrr Reverse RecoveryCharge ––– 310 460 nC di/dt = -100A/µs Diode Characteristics -2.2 -19 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.240 Ω VGS = -10V, ID = -1.3A VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V VDS = VGS, ID = -250µA ––– ––– -25 µA VDS = -150V, VGS = 0V ––– ––– -250 VDS = -120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 nA VGS = 20V IGSS IDSS Drain-to-Source Leakage Current S D G |
Аналогичный номер детали - IRF6216PBF |
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Аналогичное описание - IRF6216PBF |
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