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STI42N65M5 датащи(PDF) 5 Page - STMicroelectronics |
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STI42N65M5 датащи(HTML) 5 Page - STMicroelectronics |
5 / 18 page STx42N65M5 Electrical characteristics Doc ID 15317 Rev 3 5/18 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 400 V, ID = 20 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) - 61 24 65 13 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 33 132 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 33 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/µs VDD = 100 V (see Figure 24) - 400 7 35 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 24) - 532 10 38 ns µC A |
Аналогичный номер детали - STI42N65M5 |
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Аналогичное описание - STI42N65M5 |
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