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TPCA8053-H датащи(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8053-H датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCA8053-H 2009-08-19 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 43 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 0.2 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 7.5 A ⎯ 15.6 24.0 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 7.5 A ⎯ 13.9 22.3 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 7.5 A 23 46 ⎯ S Input capacitance Ciss ⎯ 1620 2110 Reverse transfer capacitance Crss ⎯ 60 90 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 200 ⎯ pF Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz ⎯ 2.3 3.5 Ω Rise time tr ⎯ 2.4 ⎯ Turn-on time ton ⎯ 9.1 ⎯ Fall time tf ⎯ 7.0 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 33 ⎯ ns VDD ≈ 48 V, VGS = 10 V, ID = 15 A ⎯ 25 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 48 V, VGS = 5 V, ID = 15 A ⎯ 13 ⎯ Gate-source charge 1 Qgs1 ⎯ 5.5 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 4.4 ⎯ Gate switch charge QSW VDD ≈ 48 V, VGS = 10 V, ID = 15 A ⎯ 6.9 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 45 A Forward voltage (diode) VDSF IDR = 15 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 30 V 0 V VGS 10 V ID = 7.5 A VOUT |
Аналогичный номер детали - TPCA8053-H |
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Аналогичное описание - TPCA8053-H |
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