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STD3NM60 датащи(PDF) 5 Page - STMicroelectronics

номер детали STD3NM60
подробное описание детали  N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STD3NM60 датащи(HTML) 5 Page - STMicroelectronics

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STD3NM60, STD3NM60-1, STP4NM60
Electrical characteristics
Doc ID 8370 Rev 4
5/17
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
-
3
12
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 3 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 25°C
(see
Figure 17)
-
224
1
9
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150°C
(see
Figure 17)
-
296
1.4
9.3
ns
µC
A
Table 8.
Gate-source Zener diode (1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
30
-
-
V
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