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STD3NM60 датащи(PDF) 5 Page - STMicroelectronics |
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STD3NM60 датащи(HTML) 5 Page - STMicroelectronics |
5 / 17 page STD3NM60, STD3NM60-1, STP4NM60 Electrical characteristics Doc ID 8370 Rev 4 5/17 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 3 12 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 3 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 3 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 25°C (see Figure 17) - 224 1 9 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 3 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150°C (see Figure 17) - 296 1.4 9.3 ns µC A Table 8. Gate-source Zener diode (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs=± 1mA (open drain) 30 - - V Obsolete Product(s) - Obsolete Product(s) |
Аналогичный номер детали - STD3NM60 |
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Аналогичное описание - STD3NM60 |
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