STP310N10F7 datasheet(4/13 Pages) STMICROELECTRONICS

номер детали	STP310N10F7

подробное описание детали	N-channel 100 V, 2.3 m廓 typ., 180 A STripFET??VII DeepGATE?? Power MOSFET in a TO-220 package

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Electrical characteristics

STP310N10F7

4/13

DocID022287 Rev 7

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

100

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS= 100 V

1

µA

VDS= 100 V, TC= 125°C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2.5

3.5

4.5

V

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 60 A

2.3

2.7

m

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

-

12800

-

pF

Coss

Output capacitance

-

3500

-

pF

Crss

Reverse transfer

capacitance

-170

-

pF

Qg

Total gate charge

VDD = 50 V, ID = 180 A,

VGS = 10 V

(see Figure 14)

-180

-

nC

Qgs

Gate-source charge

-

78

-

nC

Qgd

Gate-source charge

-

34

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 90 A

RG =4.7 Ω VGS = 10 V

(see Figure 13,

Figure 18)

-62

-

ns

tr

Rise time

-

108

-

ns

td(off)

Turn-off delay time

-

148

-

ns

tf

Fall time

-

40

-

ns

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