©2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

4NXXM, H11B1M, TIL113M Rev. 1.0.3

2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute

maximum ratings are stress ratings only.

Symbol

Parameter

Value

Units

TOTAL DEVICE

Storage Temperature

-50 to +150

°C

Operating Temperature

-40 to +100

°C

Lead Solder Temperature (Wave)

260 for 10 sec

°C

250

mW

Derate above 25°C

3.3

mW/°C

EMITTER

Continuous Forward Current

80

mA

Reverse Voltage

3

V

Forward Current – Peak (300µs, 2% Duty Cycle)

3.0

A

150

mW

Derate above 25°C

2.0

mW/°C

DETECTOR

Collector-Emitter Breakdown Voltage

30

V

Collector-Base Breakdown Voltage

30

V

Emitter-Collector Breakdown Voltage

5

V

150

mW

Derate above 25°C

2.0

mW/°C

Continuous Collector Current

150

mA