IRLMS1503TRPBF datasheet(6/8 Pages) IRF

номер детали	IRLMS1503TRPBF

подробное описание детали	Generation V Technology

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производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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IRLMS1503PbF

6

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P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

+

-

+

-

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

*

Fig 13. For N-channel HEXFET® power MOSFET s

Аналогичный номер детали - IRLMS1503TRPBF

производитель	номер детали	датащи	подробное описание детали
VBsemi Electronics Co.,...	IRLMS1503TRPBF	1Mb / 9P	N-Channel 30 V (D-S) MOSFET

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