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AD5162BRM10 датащи(PDF) 3 Page - Analog Devices

номер детали AD5162BRM10
подробное описание детали  Dual, 256-Position, SPI Digital Potentiometer
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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AD5162
Rev. C | Page 3 of 20
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS: 2.5 kΩ VERSION
VDD = 5 V ± 10%, or 3 V ± 10%; VA = VDD; VB = 0 V; −40°C < TA < +125°C; unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ1
Max
Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resistor Differential Nonlinearity2
R-DNL
R
WB, VA = no connect
−2
±0.1
+2
LSB
Resistor Integral Nonlinearity2
R-INL
R
WB, VA = no connect
−14
±2
+14
LSB
Nominal Resistor Tolerance3
∆R
AB
T
A = 25°C
−20
+55
%
Resistance Temperature Coefficient
(∆R
AB/RAB )/∆T
V
AB = VDD, wiper = no connect
35
ppm/°C
Wiper Resistance
R
WB
Code = 0x00, V
DD = 5 V
160
200
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE4
Differential Nonlinearity5
DNL
−1.5
±0.1
+1.5
LSB
Integral Nonlinearity5
INL
−2
±0.6
+2
LSB
Voltage Divider Temperature
Coefficient
(∆V
W/VW)/∆T
Code = 0x80
15
ppm/°C
Full-Scale Error
V
WFSE
Code = 0xFF
−14
−5.5
0
LSB
Zero-Scale Error
V
WZSE
Code = 0x00
0
4.5
12
LSB
RESISTOR TERMINALS
Voltage Range6
V
A, VB, VW
GND
V
DD
V
Capacitance A, B7
C
A, CB
f = 1 MHz, measured to GND,
code = 0x80
45
pF
Capacitance W7
C
W
f = 1 MHz, measured to GND,
code = 0x80
60
pF
Common-Mode Leakage
I
CM
V
A = VB = VDD/2
1
nA
DIGITAL INPUTS AND OUTPUTS
Input Logic High
V
IH
V
DD = 5 V
2.4
V
Input Logic Low
V
IL
V
DD = 5 V
0.8
V
Input Logic High
V
IH
V
DD = 3 V
2.1
V
Input Logic Low
V
IL
V
DD = 3 V
0.6
V
Input Current
I
IL
V
IN = 0 V or 5 V
±1
µA
Input Capacitance7
C
IL
5
pF
POWER SUPPLIES
Power Supply Range
V
DD RANGE
2.7
5.5
V
Supply Current
I
DD
V
IH = 5 V or VIL = 0 V
3.5
6
µA
Power Dissipation8
P
DISS
V
IH = 5 V or VIL = 0 V, VDD = 5 V
30
µW
Power Supply Sensitivity
PSS
V
DD = 5 V ± 10%, code = midscale
±0.02
±0.08
%/%
DYNAMIC CHARACTERISTICS9
Bandwidth, −3 dB
BW
Code = 0x80
4.8
MHz
Total Harmonic Distortion
THD
W
V
A = 1 V rms, VB = 0 V, f = 1 kHz
0.1
%
V
W Settling Time
t
S
V
A = 5 V, VB = 0 V, ±1 LSB error band
1
µs
Resistor Noise Voltage Density
e
N_WB
R
WB = 1.25 kΩ, RS = 0
3.2
nV/√Hz
1 Typical specifications represent average readings at 25°C and V
DD = 5 V.
2 Resistor position nonlinearity error, R-INL, is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from the ideal between successive tap positions. Parts are guaranteed monotonic.
3 V
A = VDD, VB = 0 V, wiper (VW) = no connect.
4 Specifications apply to all VRs.
5 INL and DNL are measured at V
W with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = 0 V.
DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions.
6 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other.
7 Guaranteed by design, but not subject to production test.
8 P
DISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.
9 All dynamic characteristics use V
DD = 5 V.


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