FMG2A datasheet(2/8 Pages) ROHM

номер детали	FMG2A

подробное описание детали	NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

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производитель	ROHM [Rohm]

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Data Sheet

EMG2 / UMG2N / FMG2A

lAbsolute maximum ratings

(Ta = 25°C)

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

Junction temperature

Range of storage temperature

lElectrical characteristics

(Ta = 25°C)

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Parameter

Symbol

Values

Unit

VCC

50

V

VIN

-

10 to +40

V

IO

30

mA

IC(MAX.)*1

100

mA

EMG2 / UMG2N

PD *2

150 (Total)*3

mW

FMG2A

300 (Total)*4

mW

Tj

150

°C

Tstg

-

55 to +150

°C

Parameter

Symbol

Conditions

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = 5V, IO = 100mA

-

V

VI(on)

VO = 0.3V, IO = 2mA

3

-

0.5

V

Input current

II

VI = 5V

-

0.18

mA

Output voltage

VO(on)

IO / II = 10mA / 0.5mA

-

0.1

0.3

m

A

DC current gain

GI

VO = 5V, IO = 5mA

68

-

Output current

IO(off)

VCC = 50V, VI = 0V

-

0.5

kW

Resistance ratio

R2/R1

-

0.8

1

1.2

-

Input resistance

R1

-

32.9

47

61.1

MHz

Transition frequency

fT *1

VCE = 10V, IE = -5mA,

f = 100MHz

-

250

-

2/7

2012.06 - Rev.B

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FMG2A датащи(PDF) 2 Page - Rohm

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