SS3H9, SS3H10

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Vishay General Semiconductor

Revision: 17-Dec-12

1

Document Number: 88752

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High-Voltage Surface Mount Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For

use

in

low

voltage

high

frequency

inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case: DO-214AB (SMC)

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-E3

-

RoHS-compliant,

commercial

grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

PRIMARY CHARACTERISTICS

3.0 A

90 V, 100 V

100 A

0.65 V

20 μA

175 °C

DO-214AB (SMC)

PARAMETER

SYMBOL

SS3H9

SS3H10

UNIT

Device marking code

MS9

MS10

Maximum repetitive peak reverse voltage

90

100

V

Working peak reverse voltage

90

100

V

Maximum DC blocking voltage

90

100

V

3.0

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

100

A

1.0

A

Critical rate of rise of reverse voltage

dV/dt

10 000

V/μs

Operating junction and storage temperature range

- 65 to + 175

°C