2N3772G datasheet(3/5 Pages) ONSEMI

номер детали	2N3772G

подробное описание детали	High Power NPN Silicon Power Transistors

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производитель	ONSEMI [ON Semiconductor]

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2N3771, 2N3772

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3

200

0

25

50

75

100

125

150

175

200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

150

100

50

25

175

125

75

Figure 2. Thermal Response — 2N3771, 2N3772

t, TIME (ms)

1.0

0.01

0.02

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

2000

qJC(t) = r(t) qJC

qJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.02

1000

40

1.0

Figure 3. Active−Region Safe Operating Area

— 2N3771, 2N3772

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

30

20

10

2.0

3.0

5.0

10

30

50

70 100

7.0

dc

5.0

7.0

3.0

100

ms

1.0 ms

20

2N3771

2N3772, (dc)

40

ms

100 ms

500 ms

PULSE CURVES APPLY

FOR ALL DEVICES

2N3771

2N3772

200

ms

BONDING WIRE LIMITED

THERMALLY LIMITED

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

TC = 25°C

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation: i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

Figure 3 is based on JEDEC registered Data. Second

breakdown pulse limits are valid for duty cycles to 10%

provided TJ(pk) < 200_C. TJ(pk) may be calculated from the

data of Figure 2. Using data of Figure 2 and the pulse power

limits of Figure 3, TJ(pk) will be found to be less than TJ(max)

for pulse widths of 1 ms and less. When using ON

Semiconductor transistors, it is permissible to increase the

pulse power limits until limited by TJ(max).

Аналогичный номер детали - 2N3772G

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	2N3772G-T30-Y	152Kb / 3P	SILICON NPN TRANSISTORS
Unisonic Technologies	2N3772G-T30-Y	152Kb / 3P	SILICON NPN TRANSISTORS

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Аналогичное описание - 2N3772G

производитель	номер детали	датащи	подробное описание детали
Boca Semiconductor Corp...	2N3771	138Kb / 3P	HIGH POWER NPN SILICON POWER TRANSISTORS
ON Semiconductor	2N3771	86Kb / 5P	High Power NPN Silicon Power Transistors October, 2006 ??Rev. 11
Mospec Semiconductor	2SD424	43Kb / 2P	HIGH-POWER NPN SILICON POWER TRANSISTORS
STMicroelectronics	BUW48	62Kb / 4P	HIGH POWER NPN SILICON TRANSISTORS
M/A-COM Technology Solu...	2N3902	501Kb / 4P	NPN High Power Silicon Transistors
STMicroelectronics	BUX48	89Kb / 7P	HIGH POWER NPN SILICON TRANSISTORS
New Jersey Semi-Conduct...	BUX98	97Kb / 3P	HIGH POWER NPN SILICON TRANSISTORS
ON Semiconductor	2N6338	66Kb / 4P	High-Power NPN Silicon Transistors May, 2001 ??Rev. 10
Boca Semiconductor Corp...	2N6338	134Kb / 3P	HIGH-POWER NPN SILICON TRANSISTORS
New Jersey Semi-Conduct...	BUW48	104Kb / 3P	HIGH POWER NPN SILICON TRANSISTORS

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