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CSD25481F4 датащи(PDF) 2 Page - Texas Instruments |
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CSD25481F4 датащи(HTML) 2 Page - Texas Instruments |
2 / 12 page CSD25481F4 SLPS420B – SEPTEMBER 2013 – REVISED FEBRUARY 2014 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = –250 μA –20 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –16 V –100 nA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –12 V –50 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = –250 μA –0.70 –0.95 –1.20 V VGS = –1.8 V, IDS = –0.1 A 395 800 m Ω VGS = –2.5 V, IDS = –0.5 A 145 174 m Ω RDS(on) Drain-to-Source On Resistance VGS = –4.5 V, IDS = –0.5 A 90 105 m Ω VGS = –8 V, IDS = –0.5 A 75 88 m Ω gfs Transconductance VDS = –10 V, IDS = –0.5 A 3.3 S Dynamic Characteristics Ciss Input Capacitance 189 pF VGS = 0 V, VDS = –10 V, Coss Output Capacitance 78 pF f = 1 MHz Crss Reverse Transfer Capacitance 5.5 pF RG Series Gate Resistance 20 Ω Qg Gate Charge Total (4.5 V) 913 pC Qgd Gate Charge Gate to Drain 153 pC VDS = –10 V, IDS = –0.5 A Qgs Gate Charge Gate to Source 240 pC Qg(th) Gate Charge at Vth 116 pC Qoss Output Charge VDS = –10 V, VGS = 0 V 1030 pC td(on) Turn On Delay Time 4.1 ns tr Rise Time 3.6 ns VDS = 0 V, VGS = –4.5 V, IDS = –0.5 A,RG = 2 Ω td(off) Turn Off Delay Time 16.9 ns tf Fall Time 6.7 ns Diode Characteristics VSD Diode Forward Voltage ISD = –0.5 A, VGS = 0 V –0.75 V Qrr Reverse Recovery Charge 1010 pC VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs trr Reverse Recovery Time 7.5 ns 4.2 Thermal Characteristics (TA = 25°C unless otherwise stated) PARAMETER Typical Values UNIT Junction-to-Ambient Thermal Resistance(1) 85 °C/W RθJA Junction-to-Ambient Thermal Resistance(2) 245 °C/W (1) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 2 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD25481F4 |
Аналогичный номер детали - CSD25481F4 |
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Аналогичное описание - CSD25481F4 |
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