поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

CSD25481F4 датащи(PDF) 2 Page - Texas Instruments

Click here to check the latest version.
номер детали CSD25481F4
подробное описание детали  20V, P-Channel NexFET??Power MOSFETs
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI1 - Texas Instruments

CSD25481F4 датащи(HTML) 2 Page - Texas Instruments

  CSD25481F4 Datasheet HTML 1Page - Texas Instruments CSD25481F4 Datasheet HTML 2Page - Texas Instruments CSD25481F4 Datasheet HTML 3Page - Texas Instruments CSD25481F4 Datasheet HTML 4Page - Texas Instruments CSD25481F4 Datasheet HTML 5Page - Texas Instruments CSD25481F4 Datasheet HTML 6Page - Texas Instruments CSD25481F4 Datasheet HTML 7Page - Texas Instruments CSD25481F4 Datasheet HTML 8Page - Texas Instruments CSD25481F4 Datasheet HTML 9Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
CSD25481F4
SLPS420B – SEPTEMBER 2013 – REVISED FEBRUARY 2014
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
4 Specifications
4.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain-to-Source Voltage
VGS = 0 V, IDS = –250 μA
–20
V
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = –16 V
–100
nA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = –12 V
–50
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, IDS = –250 μA
–0.70
–0.95
–1.20
V
VGS = –1.8 V, IDS = –0.1 A
395
800
m
VGS = –2.5 V, IDS = –0.5 A
145
174
m
RDS(on)
Drain-to-Source On Resistance
VGS = –4.5 V, IDS = –0.5 A
90
105
m
VGS = –8 V, IDS = –0.5 A
75
88
m
gfs
Transconductance
VDS = –10 V, IDS = –0.5 A
3.3
S
Dynamic Characteristics
Ciss
Input Capacitance
189
pF
VGS = 0 V, VDS = –10 V,
Coss
Output Capacitance
78
pF
f = 1 MHz
Crss
Reverse Transfer Capacitance
5.5
pF
RG
Series Gate Resistance
20
Qg
Gate Charge Total (4.5 V)
913
pC
Qgd
Gate Charge Gate to Drain
153
pC
VDS = –10 V, IDS = –0.5 A
Qgs
Gate Charge Gate to Source
240
pC
Qg(th)
Gate Charge at Vth
116
pC
Qoss
Output Charge
VDS = –10 V, VGS = 0 V
1030
pC
td(on)
Turn On Delay Time
4.1
ns
tr
Rise Time
3.6
ns
VDS = 0 V, VGS = –4.5 V,
IDS = –0.5 A,RG = 2 Ω
td(off)
Turn Off Delay Time
16.9
ns
tf
Fall Time
6.7
ns
Diode Characteristics
VSD
Diode Forward Voltage
ISD = –0.5 A, VGS = 0 V
–0.75
V
Qrr
Reverse Recovery Charge
1010
pC
VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs
trr
Reverse Recovery Time
7.5
ns
4.2 Thermal Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
Typical Values
UNIT
Junction-to-Ambient Thermal Resistance(1)
85
°C/W
RθJA
Junction-to-Ambient Thermal Resistance(2)
245
°C/W
(1)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
(2)
Device mounted on FR4 material with minimum Cu mounting area.
2
Submit Documentation Feedback
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: CSD25481F4


Аналогичный номер детали - CSD25481F4

производительномер деталидатащиподробное описание детали
logo
Texas Instruments
CSD25481F4 TI1-CSD25481F4 Datasheet
1Mb / 14P
[Old version datasheet]   CSD25481F4, 20 V P-Channel FemtoFET MOSFET
CSD25481F4 TI1-CSD25481F4 Datasheet
801Kb / 13P
[Old version datasheet]   20 V P-Channel FemtoFET MOSFET
CSD25481F4R TI1-CSD25481F4R Datasheet
1Mb / 14P
[Old version datasheet]   CSD25481F4, 20 V P-Channel FemtoFET MOSFET
CSD25481F4T TI1-CSD25481F4T Datasheet
801Kb / 13P
[Old version datasheet]   20 V P-Channel FemtoFET MOSFET
CSD25481F4 TI1-CSD25481F4_16 Datasheet
801Kb / 13P
[Old version datasheet]   20 V P-Channel FemtoFET MOSFET
More results

Аналогичное описание - CSD25481F4

производительномер деталидатащиподробное описание детали
logo
Texas Instruments
CSD25401Q3 TI1-CSD25401Q3 Datasheet
392Kb / 11P
[Old version datasheet]   P-Channel NexFET??Power MOSFETs
CSD85301Q2 TI1-CSD85301Q2 Datasheet
1Mb / 15P
[Old version datasheet]   20V Dual N-Channel NexFET Power MOSFETs
CSD25304W1015 TI1-CSD25304W1015 Datasheet
420Kb / 12P
[Old version datasheet]   20V P-Channel NexFET Power MOSFET
CSD25202W15 TI1-CSD25202W15 Datasheet
416Kb / 12P
[Old version datasheet]   20V P-Channel NexFET Power MOSFET
CSD25310Q2 TI1-CSD25310Q2_18 Datasheet
779Kb / 14P
[Old version datasheet]   20 V P-Channel NexFET Power MOSFETs
logo
Bruckewell Technology L...
MS23P19Z BWTECH-MS23P19Z Datasheet
581Kb / 6P
   20V P-Channel MOSFETs
logo
First Silicon Co., Ltd
FTK2309DFN22 FS-FTK2309DFN22 Datasheet
988Kb / 5P
   20V P-Channel MOSFETs
FTK2309S FS-FTK2309S Datasheet
940Kb / 5P
   20V P-Channel MOSFETs
FTK2307S FS-FTK2307S Datasheet
948Kb / 5P
   20V P-Channel MOSFETs
logo
Bruckewell Technology L...
MSN23P09S BWTECH-MSN23P09S Datasheet
619Kb / 6P
   20V P-Channel MOSFETs
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com