поискавой системы для электроныых деталей |
|
IRFP240PBF датащи(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
|
IRFP240PBF датащи(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page 2 IRFP240, SiHFP240 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.83 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 200 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 µA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 12 Ab -- 0.18 Ω Forward Transconductance gfs VDS = 50 V, ID = 12 Ab 6.9 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1300 - pF Output Capacitance Coss - 400 - Reverse Transfer Capacitance Crss - 130 - Total Gate Charge Qg VGS = 10 V ID = 18 A, VDS = 160 V, see fig. 6 and 13b -- 70 nC Gate-Source Charge Qgs -- 13 Gate-Drain Charge Qgd -- 39 Turn-On Delay Time td(on) VDD = 100 V, ID = 18 A, RG = 9.1 Ω, RD = 5.4 Ω, see fig. 10b -14 - ns Rise Time tr -51 - Turn-Off Delay Time td(off) -45 - Fall Time tf -36 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -5.0 - nH Internal Source Inductance LS -13 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 20 A Pulsed Diode Forward Currenta ISM -- 80 Body Diode Voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb -- 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 18 A, dI/dt = 100 A/µsb - 300 610 ns Body Diode Reverse Recovery Charge Qrr -3.4 7.1 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G www.kersemi.com |
Аналогичный номер детали - IRFP240PBF |
|
Аналогичное описание - IRFP240PBF |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |