SI3442 datasheet(2/7 Pages) FAIRCHILD

номер детали	SI3442

подробное описание детали	N-Channel Logic Level Enhancement Mode Field Effect Transistor

Download	7 Pages

Scroll/Zoom	100%

производитель	FAIRCHILD [Fairchild Semiconductor]

домашняя страница	http://www.fairchildsemi.com

Logo

2 / 7 page

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = 250 µA

20

V

I

DSS

Zero Gate Voltage Drain Current

V

DS = 16 V, VGS = 0 V

1

µA

T

J = 55

oC

10

µA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 8 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -8 V, VDS= 0 V

-100

nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = 250 µA

0.4

0.7

1

V

T

J = 125

oC

0.3

0.5

0.8

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = 4.5 V, ID = 4.1 A

0.039

0.06

Ω

T

J = 125

oC

0.06

0.11

V

GS = 2.7 V, ID = 3.6 A

0.05

0.075

I

D(on)

On-State Drain Current

V

GS = 4.5 V, VDS = 5 V

15

A

g

FS

Forward Transconductance

V

DS = 4.5 V, ID = 4.1 A

12

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = 10 V, VGS = 0 V,

f = 1.0 MHz

365

pF

C

oss

Output Capacitance

230

pF

C

rss

Reverse Transfer Capacitance

95

pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

Turn - On Delay Time

V

DD = 5 V, ID = 1 A,

V

GEN = 4.5 V, RGEN = 6 Ω

9

17

ns

t

r

Turn - On Rise Time

25

45

ns

t

D(off)

Turn - Off Delay Time

28

50

ns

t

f

Turn - Off Fall Time

8

15

ns

Q

g

Total Gate Charge

V

DS = 10 V,

I

D = 4.1 A, VGS = 4.5 V

10

14

nC

Q

gs

Gate-Source Charge

1

nC

Q

gd

Gate-Drain Charge

3.3

nC

SI3442DV Rev.A

Аналогичный номер детали - SI3442

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI3442BDV	61Kb / 4P	N-Channel 2.5-V (G-S) MOSFET Rev. C, 15-Mar-04
	SI3442BDV	112Kb / 5P	N-Channel 2.5-V (G-S) MOSFET Rev. D, 10-Sep-07
	SI3442BDV	183Kb / 9P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09
	SI3442BDV	185Kb / 9P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09
	Si3442BDV	189Kb / 9P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09

More results

Аналогичное описание - SI3442

производитель	номер детали	датащи	подробное описание детали
Hi-Sincerity Mocroelect...	HU603AL	60Kb / 5P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	BSS123	145Kb / 5P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
SamHop Microelectronics...	SDU30N03L	34Kb / 5P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Chino-Excel Technology	CEF07N8	46Kb / 5P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
SamHop Microelectronics...	SP470C	99Kb / 7P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
	STM4840	114Kb / 7P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
	STU666S	117Kb / 10P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
	STUD606S	136Kb / 8P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
	STU1553	139Kb / 10P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
	STB28N15	157Kb / 7P	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Diotec Semiconductor	MMFTN123	111Kb / 2P	N-Channel Logic Level Enhancement Mode Field Effect Transistor

More results

SI3442 датащи(PDF) 2 Page - Fairchild Semiconductor

SI3442 датащи(HTML) 2 Page - Fairchild Semiconductor

Аналогичный номер детали - SI3442

Аналогичное описание - SI3442

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL