January 2001

Si4822DY

GeneralDescription

Features

Symbol

Parameter

Si4822DY

Units

V

DSS

Drain-Source Voltage

30

V

V

GSS

Gate-Source Voltage

±20

V

I

D

Drain Current - Continuous

(Note 1a)

12.5

A

- Pulsed

50

P

D

Power Dissipation for Single Operation

(Note 1a)

2.5

W

(Note 1b)

1.2

(Note 1c)

1

T

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

50

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

Si4822DY Rev.A

12.5 A, 30 V. R

@ V

R

@ V

Fast switching speed.

Low gate charge.

High performance trench technology for

extremely low R

High power and current handling capability.

SOT-23

SuperSOT

SOIC-16

SO-8

SOT-223

SuperSOT

This N-Channel

Logic

Level MOSFET is produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

the on-state resistance and yet maintain superior

switching performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

1

6

7

8

2

4

3

5

© 2001 Fairchild Semiconductor International

S

D

S

S

SO-8

D

D

D

G

pin 1

48

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