поискавой системы для электроныых деталей |
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TIP101 датащи(PDF) 1 Page - Fairchild Semiconductor |
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TIP101 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP100 : TIP101 :TIP102 60 80 100 V V V VCEO Collector-Emitter Voltage : TIP100 : TIP101 : TIP102 60 80 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 1 A PC Collector Dissipation (Ta=25°C) 2 W Collector Dissipation (TC=25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage : TIP100 : TIP101 : TIP102 IC = 30mA, IB = 0 60 80 100 V V V ICEO Collector Cut-off Current : TIP100 : TIP101 : TIP102 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 50 50 50 µA µA µA ICBO Collector Cut-off Current : TIP100 : TIP101 : TIP102 VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 100V, IE = 0 50 50 50 µA µA µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE DC Current Gain VCE = 4V, IC = 3A VCE = 4V, IC = 8A 1000 200 20000 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA IC = 8A, IB = 80mA 2 2.5 V V VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 8A 2.8 V Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF TIP100/101/102 Monolithic Construction With Built In Base- Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107 R110k Ω ≅ R20.6k Ω ≅ Equivalent Circuit B E C R1 R2 1.Base 2.Collector 3.Emitter 1 TO-220 |
Аналогичный номер детали - TIP101 |
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Аналогичное описание - TIP101 |
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