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2SC3076Y датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали 2SC3076Y
подробное описание детали  Power Amplifier Applications Power Switching Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3076Y датащи(HTML) 2 Page - Toshiba Semiconductor

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2SC3076
2010-02-05
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
1.0
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.5 A
70
240
DC current gain
hFE (2)
VCE = 2 V, IB = 1.5 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.05 A
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 0.05 A
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Turn-on time
ton
0.1
Storage time
tstg
1.0
Switching time
Fall time
tf
IB1 = −IB2 = 0.05 A,
Duty cycle ≤ 1%
0.1
μs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
C3076
Lot No.
Note 1
Characteristics
indicator
Part No. (or abbreviation code)
20 μs
INPUT
IB1
IB2
OUTPUT
VCC = 30 V
IB2
0
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.


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