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2SC3076 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали 2SC3076
подробное описание детали  Power Amplifier Applications Power Switching Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3076 датащи(HTML) 3 Page - Toshiba Semiconductor

  2SC3076 Datasheet HTML 1Page - Toshiba Semiconductor 2SC3076 Datasheet HTML 2Page - Toshiba Semiconductor 2SC3076 Datasheet HTML 3Page - Toshiba Semiconductor 2SC3076 Datasheet HTML 4Page - Toshiba Semiconductor 2SC3076 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC3076
2010-02-05
3
Collector current IC (A)
VCE – IC
VCE – IC
Collector current IC (A)
Collector current IC (A)
VCE – IC
Collector current IC (A)
hFE – IC
Collector current IC (A)
Collector current IC (A)
1.2
0
0
Common emitter
Tc = 25°C
1.0
0.8
0.6
0.4
0.2
0.4
0.8
1.2
1.6
2.0
2.4
2.8
IB = 5 mA
40
30
10
20
1.2
0
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Common emitter
Tc = −55°C
40
30
10
20
IB = 5 mA
50
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1.2
0
Common emitter
Tc = 100°C
1.0
0.8
0.6
0.4
0.2
40
30
10
20
IB = 5 mA
Common emitter
VCE = 2 V
−55
25
Tc = 100°C
1000
10
300
500
100
50
30
0.01
0.03 0.05
0.1
0.3
0.5
1
2
VCE (sat) – IC
VBE (sat) – IC
Common emitter
IC/IB = 20
−55
25
Tc = 100°C
1
0.01
0.3
0.5
0.1
0.05
0.03
0.01
0.03 0.05
0.1
0.3
0.5
1
2
Common emitter
IC/IB = 20
100
25
Tc = −55°C
10
0.1
3
5
1
0.5
0.3
0.01
0.03 0.05
0.1
0.3
0.5
1
2


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