поискавой системы для электроныых деталей |
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U1JC44TE12L датащи(PDF) 1 Page - Toshiba Semiconductor |
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U1JC44TE12L датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page U1BC44,U1GC44,U1JC44 2006-11-06 1 TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE U1BC44, U1GC44, U1JC44 FOR HYBRID USE Average Forward Current : IF (AV) = 1.0 A Repetitive Peak Reverse Voltage : VRRM = 100 V, 400 V, 600 V Mini Plastic Mold Package ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT U1BC44 100 U1GC44 400 Repetitive Peak Reverse Voltage U1JC44 VRRM 600 V On Ceramic Substrate 1.0 (Ta = 75°C) Average Forward Current On Glass−epoxy Substrate IF (AV) 0.9 (Ta = 25°C) A 30 (50Hz) Peak One Cycle Surge Forward Current (Non−Repetitive) IFSM 33 (60Hz) A Junction Temperature Tj −40~150 °C Storage Temperature Range Tstg −40~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Peak Forward Voltage VFM IFM = 1.0A ― ― 1.2 V Repetitive Peak Reverse Current IRRM VRRM = Rated ― ― 10 μA On ceramic substrate ― ― 60 Thermal Resistance Rth (j−a) DC On glass-epoxy substrate ― ― 120 °C / W MARKING Abbreviation Code Part No. BC U1BC44 GC U1GC44 JC U1JC44 JEDEC ― JEITA ― TOSHIBA 3−4D1A Weight: 0.06g Unit: mm |
Аналогичный номер детали - U1JC44TE12L |
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Аналогичное описание - U1JC44TE12L |
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