2SA1020 datasheet(2/5 Pages) TOSHIBA

номер детали	2SA1020

подробное описание детали	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2SA1020

2010-11-09

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −50 V, IE = 0

⎯

−1

μA

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

⎯

−1

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −10 mA, IB = 0

−50

⎯

V

hFE (1)

VCE = −2 V, IC = −0.5 A

70

⎯

240

DC current gain

hFE (2)

VCE = −2 V, IC = −1.5 A

40

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = −1 A, IB = −0.05 A

⎯

−0.5

V

Base-emitter saturation voltage

VBE (sat)

IC = −1 A, IB = −0.05 A

⎯

−1.2

V

Transition frequency

fT

VCE = −2 V, IC = −0.5 A

⎯

100

⎯

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

⎯

40

⎯

pF

Turn-on time

ton

⎯

0.1

⎯

Storage time

tstg

⎯

1

⎯

Switching time

Fall time

tf

IB1 = 0.05 A , IB2 = 0.05 A

DUTY CYCLE ≤ 1%

⎯

0.1

⎯

μs

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

20

μs

Input

IB2

IB1

Output

VCC = −30 V

IB2

A1020

Lot No.

Note 2

Characteristics

indicator

Part No. (or abbreviation code)

Note 2:

A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the

RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in

electrical and electronic equipment.

Аналогичный номер детали - 2SA1020

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SA1020	194Kb / 3P	TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
Unisonic Technologies	2SA1020	549Kb / 4P	SILICON PNP EPITAXIAL TRANSISTOR
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SHENZHEN YONGERJIA INDU...	2SA1020	132Kb / 1P	TRANSISTOR (PNP)
Unisonic Technologies	2SA1020	170Kb / 4P	PNP EPITAXIAL SILICON TRANSISTOR

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