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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD17483F4 датащи(PDF) 5 Page - Texas Instruments |
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CSD17483F4 датащи(HTML) 5 Page - Texas Instruments |
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5 / 12 page  0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 −50 −25 0 25 50 75 100 125 150 175 TA - AmbientTemperature (ºC) Typical RthetaJA =90ºC/W(max Cu) G001 0.01 0.1 1 10 100 0.01 0.1 1 10 50 VDS - Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s DC Single Pulse Typical RthetaJA =250ºC/W(min Cu) G001 0.1 1 10 100 0.001 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 CSD17483F4 www.ti.com SLPS447A – JULY 2013 – REVISED NOVEMBER 2013 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING Figure 12. Maximum Drain Current vs. Temperature Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CSD17483F4 |
Аналогичный номер детали - CSD17483F4 |
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Аналогичное описание - CSD17483F4 |
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