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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD13202Q2 датащи(PDF) 2 Page - Texas Instruments |
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CSD13202Q2 датащи(HTML) 2 Page - Texas Instruments |
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2 / 11 page  CSD13202Q2 SLPS313 – SEPTEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS TA = 25°C, unless otherwise specified PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA 12 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 9.6V 1 μA IGSS Gate to Source Leakage Current VDS = 0V, VGS = 8V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250μA 0.58 0.80 1.10 V VGS = 2.5V, IDS = 5A 9.1 11.6 m Ω RDS(on) Drain to Source On Resistance VGS = 3V, IDS = 5A 8.4 10.4 m Ω VGS = 4.5V, IDS = 5A 7.5 9.3 m Ω gfs Transconductance VDS = 6V, IDS = 5A 44 S Dynamic Characteristics CISS Input Capacitance 767 997 pF COSS Output Capacitance VGS = 0V, VDS = 6V, f = 1MHz 506 657 pF CRSS Reverse Transfer Capacitance 43 56 pF Rg Series Gate Resistance 0.7 1.4 Ω Qg Gate Charge Total (4.5V) 5.1 6.6 nC Qgd Gate Charge – Gate to Drain 0.76 nC VDS = 6V, IDS = 5A Qgs Gate Charge Gate to Source 0.98 nC Qg(th) Gate Charge at Vth 0.57 nC QOSS Output Charge VDS = 6V, VGS = 0V 5.7 nC td(on) Turn On Delay Time 4.5 ns tr Rise Time 28 ns VDS = 6V, VGS = 4.5V, IDS = 5A RG = 2Ω td(off) Turn Off Delay Time 11.0 ns tf Fall Time 13.6 ns Diode Characteristics VSD Diode Forward Voltage IDS = 5A, VGS = 0V 0.75 1 V Qrr Reverse Recovery Charge 13 nC VDD = 6V, IF = 5A, di/dt = 200A/μs trr Reverse Recovery Time 28 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case(1) 6.4 °C/W RθJA Thermal Resistance Junction to Ambient(1)(2) 60 °C/W (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD13202Q2 |
Аналогичный номер детали - CSD13202Q2 |
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Аналогичное описание - CSD13202Q2 |
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