поискавой системы для электроныых деталей |
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SIZ700DT-T1-GE3 датащи(PDF) 5 Page - Vishay Siliconix |
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SIZ700DT-T1-GE3 датащи(HTML) 5 Page - Vishay Siliconix |
5 / 14 page Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 5 Vishay Siliconix SiZ700DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = - 50 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 -50 -25 0 25 50 75 100 125 150 ID = 250 µA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.005 0.010 0.015 0.020 0.025 0.030 012 3 45 67 8 910 TJ = 25 °C TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 10 20 30 40 50 60 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs BVDSS Limited 1ms 10 ms 1 s, 10 s 100 s, DC 10 µs VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited byRDS(on)* 100 ms |
Аналогичный номер детали - SIZ700DT-T1-GE3 |
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Аналогичное описание - SIZ700DT-T1-GE3 |
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