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AM27C4096-255JI датащи(PDF) 6 Page - Advanced Micro Devices

номер детали AM27C4096-255JI
подробное описание детали  4 Megabit (256 K x 16-Bit) CMOS EPROM
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

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Am27C4096
common connection to all devices in the array and con-
nected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be used
between VCC and VSS for each eight devices. The loca-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 and A10–17 = VIL.
4. See DC Programming Characteristics for VPP voltage during programming.
Mode
CE#/PGM#
OE#
A0
A9
VPP
Outputs
Read
VIL
VIL
XX
X
DOUT
Output Disable
VIL
VIH
X
X
X
High Z
Standby (TTL)
VIH
X
X
X
X
High Z
Standby (CMOS)
VCC ± 0.3 V
X
X
X
X
High Z
Program
VIL
VIH
XX
VPP
DIN
Program Verify
VIH
VIL
XX
VPP
DOUT
Program Inhibit
VIH
XX
X
VPP
High Z
Autoselect
(Note 3)
Manufacturer Code
VIL
VIL
VIL
VH
X
01h
Device Code
VIL
VIL
VIH
VH
X
19h


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