CD00222640 datasheet(4/18 Pages) STMICROELECTRONICS

номер детали	CD00222640

подробное описание детали	N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET

Download	18 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

4 / 18 page

Electrical characteristics

STx42N65M5

4/18

Doc ID 15317 Rev 3

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 16.5 A

0.070

0.079

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

4650

110

3.2

-

pF

Co(er)

(1)

1.

Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0

to 80% VDSS

Equivalent output

capacitance energy

V(BR)DSS

-100

-

pF

Co(tr)

(2)

2.

Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0

to 80% VDSS

Equivalent output

capacitance time

V(BR)DSS

-285

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

1.1

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 16.5 A,

VGS = 10 V

(see

Figure 20)

-

100

26

38

-

nC

Аналогичный номер детали - CD00222640

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	CD00234048	947Kb / 25P	Rail-to-rail input/output, 29 關A, 420 kHz CMOS operational January 2013 Rev 5
	CD00237391	3Mb / 177P	ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
	CD00251512	930Kb / 16P	N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220
	CD00253742	2Mb / 120P	XL-density performance line ARM-based 32-bit MCU
	CD00257532	475Kb / 19P	Multifunction very low drop voltage regulator November 2009 Rev 1

More results

Аналогичное описание - CD00222640

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STW60N65M5	975Kb / 16P	N-channel 650 V, 0.049 ohm, 46 A MDmesh V Power MOSFET
	STB45N65M5	1Mb / 20P	N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET
	STF15N65M5	925Kb / 17P	N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET
	STX42N65M5	1Mb / 18P	N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 June 2009 Rev 3
	STL42N65M5	686Kb / 14P	N-channel 650 V, 0.070 廓, 34 A MDmesh??V Power MOSFET in PowerFLAT??8x8 HV package April 2012 Rev 2
	STB42N65M5	1Mb / 18P	N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
	STW54NM65N	499Kb / 12P	N-channel 650 V, 0.054 OHM, 50 A MDmesh II Power MOSFET
	STW77N65M5	963Kb / 14P	N-channel 650 V, 0.033 ohm, 69 A, MDmesh V Power MOSFET TO-247
	STF42N65M5	1Mb / 18P	N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
	STB38N65M5	1Mb / 22P	N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

More results

CD00222640 датащи(PDF) 4 Page - STMicroelectronics

CD00222640 датащи(HTML) 4 Page - STMicroelectronics

Аналогичный номер детали - CD00222640

Аналогичное описание - CD00222640

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

датащи скачать

ссылки URL