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STB2N62K3 датащи(PDF) 4 Page - STMicroelectronics

номер детали STB2N62K3
подробное описание детали  N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
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Electrical characteristics
STB/D/F/P/U2N62K3
4/25
Doc ID 018898 Rev 2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
620
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 620 V
VDS = 620 V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static drain-source
on-resistance
VGS = 10 V, ID = 1.1 A
3
3.6
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
-
340
26
4
-
pF
pF
pF
Co(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 496 V, VGS = 0
-
17
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 496 V, ID = 1.1 A,
VGS = 10 V
(see Figure 20)
-
15
3
9
-
nC
nC
nC


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