91113 TKIM TC-00002966/O2412 TKIM/53012 TKIM TC-00002772/ No. A1655-1/6

O1211 TKIM TC-00002654/21710QA TKIM TC-00002253

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

September, 2013

SMP3003

P-Channel Power MOSFET

–75V, –100A, 8.0m

Features

•

ON-resistance RDS(on)1=6.2m

Ω (typ.)

•

4V drive

•

Input capacitance Ciss=13400pF (typ.)

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain to Source Voltage

VDSS

--75

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--100

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--400

A

Allowable Power Dissipation

PD

Tc=25°C

90

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

468

mJ

Avalanche Current *2

IAV

--60

A

Note :

*1 VDD=--48V, L=100μH, IAV=--60A (Fig.1)

*2 L≤100μH, Single pulse

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--75

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--75V, VGS=0V

--10

μA

Gate to Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--1.2

--2.6

V

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--50A

140

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=--50A, VGS=--10V

6.2

8.0

mΩ

RDS(on)2

ID=--50A, VGS=--4V

8.0

11

mΩ

Input Capacitance

Ciss

VDS=--20V, f=1MHz

13400

pF

Output Capacitance

Coss

1000

pF

Reverse Transfer Capacitance

Crss

740

pF

Turn-ON Delay Time

td(on)

See Fig.2

95

ns

Rise Time

tr

1000

ns

Turn-OFF Delay Time

td(off)

800

ns

Fall Time

tf

820

ns

Total Gate Charge

Qg

VDS=--48V, VGS=--10V, ID=--100A

280

nC

Gate to Source Charge

Qgs

50

nC

Gate to Drain “Miller” Charge

Qgd

55

nC

Diode Forward Voltage

VSD

IS=--100A, VGS=0V

--1.0

--1.5

V

Reverse Recovery Time

trr

See Fig.3

IS=--100A, VGS=0V, di/dt=--100A/μs

120

ns

Reverse Recovery Charge

Qrr

380

nC

Ordering number : ENA1655D

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

TO-263