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74HC1G08GW датащи(PDF) 3 Page - NXP Semiconductors |
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74HC1G08GW датащи(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 74HC_HCT1G08_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 17 July 2007 3 of 11 NXP Semiconductors 74HC1G08; 74HCT1G08 2-input AND gate 7. Functional description 8. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] Above 55 °C the value of P tot derates linearly with 2.5 mW/K. 9. Recommended operating conditions Table 4. Function table H = HIGH voltage level; L = LOW voltage level Input Output A B Y LLL LH L HL L HHH Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). [1] Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +7.0 V IIK input clamping current VI < −0.5 V or VI >VCC + 0.5 V - ±20 mA IOK output clamping current VO < −0.5 V or VO >VCC + 0.5 V - ±20 mA IO output current −0.5 V < VO <VCC + 0.5 V - ±12.5 mA ICC supply current - 25 mA IGND ground current −25 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation Tamb = −40 °C to +125 °C [2] - 200 mW Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74HC1G08 74HCT1G08 Unit Min Typ Max Min Typ Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0- VCC V VO output voltage 0 - VCC 0- VCC V Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C ∆t/∆V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - - 139 - - 139 ns/V VCC = 6.0 V - - 83 - - - ns/V |
Аналогичный номер детали - 74HC1G08GW |
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Аналогичное описание - 74HC1G08GW |
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