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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF8788TRPBF датащи(PDF) 1 Page - International Rectifier |
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IRF8788TRPBF датащи(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 8/18/08 IRF8788PbF HEXFET® Power MOSFET Notes through
are on page 9 Benefits l Very Low Gate Charge l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg l Lead-Free Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 Description The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. PD - 97137A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 RθJA Junction-to-Ambient fg ––– 50 °C/W V A W °C Max. 24 19 190 ±20 30 -55 to + 150 2.5 0.02 1.6 VDSS RDS(on) max Qg 30V 2.8m:@VGS = 10V 44nC |
Аналогичный номер детали - IRF8788TRPBF |
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Аналогичное описание - IRF8788TRPBF |
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