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TPS2831DG4 датащи(PDF) 5 Page - Texas Instruments |
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TPS2831DG4 датащи(HTML) 5 Page - Texas Instruments |
5 / 22 page TPS2830, TPS2831 FAST SYNCHRONOUSBUCK MOSFET DRIVERS WITH DEADTIME CONTROL SLVS196C − JANUARY1999 − REVISED JANUARY 2001 5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 recommended operating conditions MIN NOM MAX UNIT Supply voltage, VCC 4.5 15 V Input voltage BOOT to PGND 4.5 28 V electrical characteristics over recommended operating virtual junction temperature range, VCC = 6.5 V, ENABLE = High, CL = 3.3 nF (unless otherwise noted) supply current PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCC Supply voltage range 4.5 15 V VENABLE = LOW, VCC =15 V 100 µA V Quiescent current VENABLE = HIGH, VCC =15 V 0.1 VCC Quiescent current VENABLE = HIGH, BOOTLO grounded, See Note 3 VCC =12 V, fSWX = 200 kHz, CHIGHDR = 50 pF, CLOWDR = 50 pF, 3 mA NOTE 3: Ensured by design, not production tested. output drivers PARAMETER TEST CONDITIONS MIN TYP MAX UNIT High-side sink Duty cycle < 2%, VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V 0.7 1.1 High-side sink (see Note 4) Duty cycle < 2%, tpw < 100 µs (see Note 3) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 5 V 1.1 1.5 A (see Note 4) tpw < 100 µs (see Note 3) VBOOT – VBOOTLO = 12 V, VHIGHDR = 10.5 V 2 2.4 A High-side Duty cycle < 2%, VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5V 1.2 1.4 High-side source (see Note 4) Duty cycle < 2%, tpw < 100 µs (see Note 3) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 1.5 V 1.3 1.6 A Peak output- source (see Note 4) tpw < 100 µs (see Note 3) VBOOT – VBOOTLO = 12 V, VHIGHDR = 1.5 V 2.3 2.7 A Peak output- current Low-side sink Duty cycle < 2%, VCC = 4.5 V, VLOWDR = 4 V 1.3 1.8 current Low-side sink (see Note 4) Duty cycle < 2%, tpw < 100 µs (see Note 3) VCC = 6.5 V, VLOWDR = 5 V 2 2.5 A (see Note 4) tpw < 100 µs (see Note 3) VCC = 12 V, VLOWDR = 10.5 V 3 3.5 A Low-side Duty cycle < 2%, VCC = 4.5 V, VLOWDR = 0.5V 1.4 1.7 Low-side source (see Note 4) Duty cycle < 2%, tpw < 100 µs (see Note 3) VCC = 6.5 V, VLOWDR = 1.5 V 2 2.4 A source (see Note 4) tpw < 100 µs (see Note 3) VCC = 12 V, VLOWDR = 1.5 V 2.5 3 A VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5 V 5 High-side sink (see Note 4) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 0.5 V 5 Ω High-side sink (see Note 4) VBOOT – VBOOTLO = 12 V, VHIGHDR = 0.5 V 5 Ω VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V 75 High-side source (see Note 4) VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 6 V 75 Ω Output High-side source (see Note 4) VBOOT – VBOOTLO = 12 V, VHIGHDR =11.5 V 75 Ω Output resistance VDRV = 4.5 V, VLOWDR = 0.5 V 9 resistance Low-side sink (see Note 4) VDRV = 6.5 V VLOWDR = 0.5 V 7.5 Ω Low-side sink (see Note 4) VDRV = 12 V, VLOWDR = 0.5 V 6 Ω VDRV = 4.5 V, VLOWDR = 4 V 75 Low-side source (see Note 4) VDRV = 6.5 V, VLOWDR = 6 V 75 Ω Low-side source (see Note 4) VDRV = 12 V, VLOWDR = 11.5 V 75 Ω NOTES: 3. Ensured by design, not production tested. 4. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is the Rds(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. |
Аналогичный номер детали - TPS2831DG4 |
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Аналогичное описание - TPS2831DG4 |
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