SI4831DY-T1-E3 datasheet(2/7 Pages) VISHAY

номер детали	SI4831DY-T1-E3

подробное описание детали	P-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4831DY

Vishay Siliconix

New Product

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 71061

S-61859—Rev. A, 10-Oct-99

THERMAL RESISTANCE RATINGS

Parameter

Device

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient (t

v 10 sec)a

MOSFET

R

52

62.5

_C/W

Maximum Junction-to-Ambient (t

v 10 sec)a

Schottky

RthJA

56

68

_C/W

Maximum Junction-to-Ambient (t = steady state)a

MOSFET

RthJA

82

100

_C/W

Maximum Junction-to-Ambient (t = steady state)a

Schottky

91

110

_C/W

Maximum Junction-to-Foot

MOSFET

RthJF

27

33

Maximum Junction-to-Foot

Schottky

RthJF

32

40

Notes

a.

Surface Mounted on FR4 Board.

b.

t

v 10 sec.

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –24 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –24 V, VGS = 0 V, TJ = 75_C

–10

mA

On-State Drain Currenta

ID(on)

VDS w –5 V, VGS = –10 V

–20

A

Drain Source On State Resistancea

rDS( )

VGS = –10 V, ID = –5 A

0.036

0.045

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –4.5 V, ID = –3.5 A

0.060

0.090

W

Forward Transconductancea

gfs

VDS = –15 V, ID = –5 A

9

S

Diode Forward Voltagea

VSD

IS = –1.7 A, VGS = 0 V

–0.75

–1.2

V

Dynamicb

Total Gate Charge

Qg

V15 V V

5 V I

5 A

10

20

C

Gate-Source Charge

Qgs

VDS = –15 V, VGS = –5 V, ID = –5 A

4.5

nC

Gate-Drain Charge

Qgd

3.6

Turn-On Delay Time

td(on)

V15 V R

15

W

13

25

Rise Time

tr

VDD = –15 V, RL = 15 W

I

1 A V

10 V R

6

W

15

30

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ –1 A, VGEN = –10 V, RG = 6 W

37

70

ns

Fall Time

tf

14

30

Source-Drain Reverse Recovery Time

trr

IF = –1.7 A, di/dt = 100 A/ms

35

70

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Forward Voltage Drop

VF

IF = 3 A

0.485

0.53

V

Forward Voltage Drop

VF

IF = 3 A, TJ = 125_C

0.42

0.47

V

Mi

R

L

k

C

I

Vr = 30 V

0.008

0.1

A

Maximum Reverse Leakage Current

Irm

Vr = 30 V, TJ = 75_C

0.4

5

mA

Vr = 30 V, TJ = 125_C

6.5

20

Junction Capacitance

CT

Vr = 15 V

102

pF

Аналогичный номер детали - SI4831DY-T1-E3

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Vishay Siliconix	SI4831DY	70Kb / 6P	P-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 10-Oct-99

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Аналогичное описание - SI4831DY-T1-E3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4833BDY	206Kb / 11P	P-Channel 30 V (D-S) MOSFET with Schottky Diode Rev. B, 15-Aug-11
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	SI4833DY	120Kb / 7P	P-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 02-Nov-98
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SI4831DY-T1-E3 датащи(PDF) 2 Page - Vishay Siliconix

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Аналогичный номер детали - SI4831DY-T1-E3

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