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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KSD-T7L001-000 датащи(PDF) 1 Page - KODENSHI_AUK CORP. |
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KSD-T7L001-000 датащи(HTML) 1 Page - KODENSHI_AUK CORP. |
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1 / 5 page  KSD-T7L001-000 1 SUT041C Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE(sat)= 0.5V Max • 2 NPN chips in TESOP-8M Package Ordering Information Type NO. Marking Package Code SUT041C T041 □ TESOP-8M □ : Year & Week Code Absolute maximum ratings(TR1, TR2) (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 45 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 5 V IC 1 A(DC) Collector current ICP* 2 A(Pulse) 0.5 W/TOTAL PC(Ta=25°C) ** 0.4 W/ELEMENT Collector power dissipation PC(Tc=25°C) 4 W/TOTAL Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C * : Single pulse, tp= 300 ㎲ ** : Each terminal mounted on a recommended solder land Electrical Characteristics(TR1, TR2) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100μA, IE=0 45 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 40 - - V Emitter-Base breakdown voltage BVEBO IE=10μA, IC=0 5 - - V Collector cut-off current ICBO VCB=45V, IE=0 - - 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 μA DC current gain hFE 1) VCE=1V, IC=100mA 160 - 320 - Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA - - 0.5 V Transition frequency fT VCE=5V, IC=10mA - 150 - MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 8 - pF Note 1) hFE Rank : 160~320 only TESOP-8M |
Аналогичный номер детали - KSD-T7L001-000 |
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Аналогичное описание - KSD-T7L001-000 |
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