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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6623TRPBF датащи(PDF) 1 Page - International Rectifier |
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IRF6623TRPBF датащи(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 5/3/06 Notes through are on page 2 Description The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag- ing to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac- turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6623PbF has been optimized for param- eters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket. VDSS RDS(on) max Qg(typ.) 20V 5.7m Ω@VGS = 10V 11nC 9.7m Ω@VGS = 4.5V DirectFET ISOMETRIC ST Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V i ID @ TA = 25°C Continuous Drain Current, VGS @ 10V Ãf A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation i PD @TA = 25°C Power Dissipation f W PD @TA = 70°C Power Dissipation f EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient fj ––– 58 RθJA Junction-to-Ambient gj 12.5 ––– RθJA Junction-to-Ambient hj 20 ––– °C/W RθJC Junction-to-Case ij ––– 3.0 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Max. 16 13 120 ±20 20 55 -40 to + 150 42 0.017 1.4 2.1 43 40 PD - 97085 IRF6623PbF IRF6623TRPbF l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET |
Аналогичный номер детали - IRF6623TRPBF |
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