 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRF6691PBF датащи(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF6691PBF датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  IRF6691PbF 2 www.irf.com PROVISIONAL
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 150A. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 12 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.8 2.5 m Ω ––– 1.2 1.8 VGS(th) Gate Threshold Voltage 1.6 ––– 2.5 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient –––-4.1––– mV/°C ––– ––– 1.4 mA IDSS Drain-to-Source Leakage Current ––– ––– 500 µA ––– ––– 5 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 110 ––– ––– S Qg Total Gate Charge ––– 47 71 Qgs1 Pre-Vth Gate-to-Source Charge ––– 14 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.4 ––– nC Qgd Gate-to-Drain Charge ––– 15 ––– Qgodr Gate Charge Overdrive ––– 14 ––– See Fig. 14 Qsw Switch Charge (Qgs2 + Qgd) ––– 19 ––– Qoss Output Charge ––– 30 ––– nC RG Gate Resistance ––– 0.60 1.5 Ω td(on) Turn-On Delay Time ––– 23 ––– tr Rise Time ––– 95 ––– ns td(off) Turn-Off Delay Time ––– 25 ––– tf Fall Time ––– 10 ––– Ciss Input Capacitance ––– 6580 ––– Coss Output Capacitance ––– 2070 ––– pF Crss Reverse Transfer Capacitance ––– 840 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 200 j (Body Diode) A ISM Pulsed Source Current ––– ––– 260 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 0.65 V trr Reverse Recovery Time ––– 32 48 ns Qrr Reverse Recovery Charge ––– 26 39 nC ID = 17A VGS = 0V VDS = 10V ID = 26A TJ = 25°C, IF = 25A di/dt = 100A/µs iÃSee Fig. 17 TJ = 25°C, IS = 25A, VGS = 0V i showing the integral reverse p-n junction diode. ID = 10mA, reference to 25°C VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 10mA VGS = 4.5V, ID = 12A i VGS = 10V, ID = 15A i VDS = 20V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V VGS = 4.5V MOSFET symbol Clamped Inductive Load VDS = 10V, ID = 26A Conditions See Fig. 15 & 16 ƒ = 1.0MHz VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5VÃi VDS = 10V |
Аналогичный номер детали - IRF6691PBF |
|
|
|
ссылки URL |
| Конфиденциальность |
| ALLDATASHEETRU.COM |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
