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IRF7748L1TRPBF датащи(PDF) 2 Page - International Rectifier

номер детали IRF7748L1TRPBF
подробное описание детали  DirectFET??Power MOSFET
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7748L1TRPBF датащи(HTML) 2 Page - International Rectifier

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© 2012 International Rectifier
February 18, 2013
 
IRF7748L1TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
VDSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.022 –––
V/°C Reference to 25°C, ID = 2mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.7
2.2
m
 VGS = 10V, ID = 89A 
VGS(th)
Gate Threshold Voltage
2.0
2.9
4.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS =60 V, VGS = 0V
–––
–––
250
VDS =60V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
gfs
Forward Transconductance
176
–––
–––
S
VDS = 10V, ID =89A
Qg
Total Gate Charge
–––
146
220
 
Qgs1
Pre– Vth Gate-to-Source Charge
–––
31
–––  
VDS = 30V
Qgs2
Post– Vth Gate-to-Source Charge
–––
12
–––
nC 
VGS = 10V
Qgd
Gate-to-Drain Charge
–––
40
–––  
ID = 89A
Qgodr
Gate Charge Overdrive
–––
63
–––  
See Fig.9
Qsw
Switch Charge (Qgs2 + Qgd)
–––
52
–––  
Qoss
Output Charge
–––
82
–––
nC 
VDS = 16V,VGS = 0V
RG
Gate Resistance
–––
1.3
–––

td(on)
Turn-On Delay Time
–––
19
–––
ns
VDD = 30V, VGS = 10V
tr
Rise Time
–––
104
–––
ID = 89A
td(off)
Turn-Off Delay Time
–––
54
–––
RG= 1.8
tf
Fall Time
–––
77
–––
Ciss
Input Capacitance
–––
8075 –––
pF  
VGS = 0V
Coss
Output Capacitance
–––
1150 –––
VDS = 50V
Crss
Reverse Transfer Capacitance
–––
540
–––
ƒ = 1.0MHz
Coss
Output Capacitance
–––
5390 –––
VGS=0V, VDS = 1.0V,ƒ =1.0MHz
Coss
Output Capacitance
–––
850
–––
VGS=0V, VDS = 48V,ƒ =1.0MHz
Diode Characteristics  
Parameter
Min. Typ. Max.
Units
Conditions
IS
Continuous Source Current
–––
–––
85
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
592
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C,IS = 89A,VGS = 0V 
trr
Reverse Recovery Time
–––
58
–––
ns
TJ = 25°C ,IF = 89A,VDD = 30V
Qrr
Reverse Recovery Charge
–––
113
–––
nC
di/dt = 100A/µs 
VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient
–––
-9.9
–––
mV/°C
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%


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