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SI7905DN-T1-GE3 датащи(PDF) 1 Page - Vishay Siliconix |
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SI7905DN-T1-GE3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7905DN Document Number: 69920 S11-2187-Rev. C, 07-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual P-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile •100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. f. TC = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) Qg (Typ.) - 40 0.060 at VGS = - 10 V - 6e 11 nC 0.089 at VGS = - 4.5V - 5f Ordering Information: Si7905DN-T1-E3 (Lead (Pb)-free) Si7905DN-T1-GE3 (Lead (Pb)-free and Halogen-free) PowerPAK 1212-8 Bottom View 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 3.30 mm 3.30 mm S G D P-Channel MOSFET S G D P-Channel MOSFET 2 2 2 1 1 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 6e A TC = 70 °C - 5 TA = 25 °C - 5a, b TA = 70 °C - 4a, b Pulsed Drain Current IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 6e TA = 25 °C - 2a, b Avalanche Current L = 0.1 mH IAS - 15 Single-Pulse Avalanche Energy EAS 11.25 mJ Maximum Power Dissipation TC = 25 °C PD 20.8 W TC = 70 °C 13.3 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 |
Аналогичный номер детали - SI7905DN-T1-GE3 |
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Аналогичное описание - SI7905DN-T1-GE3 |
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