поискавой системы для электроныых деталей |
|
IRF740S датащи(PDF) 2 Page - Vishay Siliconix |
|
IRF740S датащи(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91055 2 S11-1049-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740S, SiHF740S Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -40 Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 400 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.49 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V - - 25 μA VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 6.0 Ab - - 0.55 Forward Transconductance gfs VDS = 50 V, ID = 6.0 Ab 5.8 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1400 - pF Output Capacitance Coss - 330 - Reverse Transfer Capacitance Crss - 120 - Total Gate Charge Qg VGS = 10 V ID = 10 A, VDS = 320 V, see fig. 6 and 13b -- 63 nC Gate-Source Charge Qgs -- 9.0 Gate-Drain Charge Qgd -- 32 Turn-On Delay Time td(on) VDD = 200 V, ID = 10 A, Rg = 9.1 , RD = 20 , see fig. 10b -14 - ns Rise Time tr -27 - Turn-Off Delay Time td(off) -50 - Fall Time tf -24 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 10 A Pulsed Diode Forward Currenta ISM -- 40 Body Diode Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 Vb -- 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb - 370 790 ns Body Diode Reverse Recovery Charge Qrr -3.8 8.2 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
Аналогичный номер детали - IRF740S |
|
Аналогичное описание - IRF740S |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |