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KSD882 датащи(PDF) 1 Page - Fairchild Semiconductor

номер детали KSD882
подробное описание детали  NPN Epitaxial Silicon Transistor
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSD882 датащи(HTML) 1 Page - Fairchild Semiconductor

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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSD882 Rev. B
1
November 2007
KSD882
NPN Epitaxial Silicon Transistor
Recommended Applications
• Audio Frequency Power Amplifier
Featuers
• Low Speed Switcing
• Complement to KSB772.
Absolute Maximum Ratings* T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** PW
≤10ms, Duty Cycle≤50%
Electrical Characteristics. T
a=25°C unless otherwise noted
* Pulse Test: PW
≤350µs, Duty Cycle≤2% Pulsed
Symbol
Parameter
Ratings
Units
BVCBO
Collector-Base Voltage
40
V
BVCEO
Collector-Emitter Voltage
30
V
BVEBO
Emitter-Base Voltage
5
V
IC
Collector Current(DC)
3
A
IC
Collector Current(Pulse)**
7
A
IB
Base Current
0.6
A
PD
Total Device Dissipation(TC=25°C)
Total Device Dissipation(Ta=25°C)
10
1
W
W
TJ, TSTG
Junction and Storage Temperature
- 55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=500uA, IE=0
40
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
30
V
BVEBO
Emitter-Base Breakdown Voltage
IE=500uA, IC=0
5
V
ICBO
Collector Cut-off Current
VCB = 30V, IE = 0
1
µA
IEBO
Emitter Cut-off Current
VEB = 3V, IC = 0
1
µA
hFE1
hFE2
*DC Current Gain
VCE = 2V, IC = 20mA
VCE = 2V, IC = 1A
30
60
150
160
400
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
0.3
0.5
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
1.0
2.0
V
fT
Current Gain Bandwidth Product
VCE = 5V, IE = 0.1A
90
MHz
Cob
Output Capacitance
VCB = 10V, IE = 0
f = 1MHz
45
pF
1
TO-126
1. Emitter
2.Collector
3.Base


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