поискавой системы для электроныых деталей |
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KSD882 датащи(PDF) 1 Page - Fairchild Semiconductor |
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KSD882 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com KSD882 Rev. B 1 November 2007 KSD882 NPN Epitaxial Silicon Transistor Recommended Applications • Audio Frequency Power Amplifier Featuers • Low Speed Switcing • Complement to KSB772. Absolute Maximum Ratings* T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** PW ≤10ms, Duty Cycle≤50% Electrical Characteristics. T a=25°C unless otherwise noted * Pulse Test: PW ≤350µs, Duty Cycle≤2% Pulsed Symbol Parameter Ratings Units BVCBO Collector-Base Voltage 40 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 3 A IC Collector Current(Pulse)** 7 A IB Base Current 0.6 A PD Total Device Dissipation(TC=25°C) Total Device Dissipation(Ta=25°C) 10 1 W W TJ, TSTG Junction and Storage Temperature - 55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=500uA, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 V BVEBO Emitter-Base Breakdown Voltage IE=500uA, IC=0 5 V ICBO Collector Cut-off Current VCB = 30V, IE = 0 1 µA IEBO Emitter Cut-off Current VEB = 3V, IC = 0 1 µA hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 20mA VCE = 2V, IC = 1A 30 60 150 160 400 VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.3 0.5 V VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 1.0 2.0 V fT Current Gain Bandwidth Product VCE = 5V, IE = 0.1A 90 MHz Cob Output Capacitance VCB = 10V, IE = 0 f = 1MHz 45 pF 1 TO-126 1. Emitter 2.Collector 3.Base |
Аналогичный номер детали - KSD882 |
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Аналогичное описание - KSD882 |
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