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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N5165 датащи(PDF) 1 Page - Digitron Semiconductors |
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2N5165 датащи(HTML) 1 Page - Digitron Semiconductors |
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1 / 6 page  DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130117 2N5164-2N5171 SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive forward and reverse blocking voltage(1)(2) 2N5164, 2N5168 2N5165, 2N5169 2N5166, 2N5170 2N5167, 2N5171 VRRM, VDRM 50 200 400 600 Volts Non repetitive peak reverse blocking voltage 2N5164, 2N5168 2N5165, 2N5169 2N5166, 2N5170 2N5167, 2N5171 VRSM 75 300 500 700 Volts Forward current RMS IT(RMS) 20 Amps Average on state current, TC = 67°C IT(AV) 13 Amps Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms I2t 235 A2s Peak non-repetitive surge current (TJ = -40 to +100°C) (1 cycle, 60Hz preceded and followed by rated current and voltage) ITSM 240 Amps Peak gate power (maximum pulse width = 10µs) PGM 5 Watts Average gate power PG(AV) 0.5 Watts Forward peak gate current (maximum pulse width = 10µs) IGM 2 Amps Peak gate voltage VGM 10 Volts Operating junction temperature range TJ -40 to +100 °C Storage temperature range Tstg -40 to +150 °C Mounting torque (2N5168-2N5171) - 30 In. lb. Note 1: VDRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode. THERMAL CHARACTERISTICS Characteristic Symbol Typical Maximum Unit Thermal resistance, junction to case 2N5164, 2N5165, 2N5166, 2N5167 2N5168, 2N5169, 2N5170, 2N5171 R ӨJC 1 1.1 1.5 1.6 °C/W ELECTRICAL CHARACTERISTICS (TC 25°C unless otherwise noted) Characteristic Symbol Min. Max. Unit Peak forward blocking current (Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 100°C IDRM or IRRM - - 10 5 µA mA Gate trigger current (continuous dc)(1) (VD = 7 Vdc, RL = 100 Ω) (VD = 7 Vdc, RL = 100 Ω, TC = -40°C) IGT - - 40 75 mA Gate trigger voltage (continuous dc) (VD = 7 Vdc, gate open) (VD = 7 Vdc, RL = 100 Ω, TC = -40°C) (VD = Rated VDRM, RL = 100 Ω, TJ = 100°C) VGT - - 0.2 1.5 2.5 - volts |
Аналогичный номер детали - 2N5165 |
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Аналогичное описание - 2N5165 |
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