2SC3582 datasheet(3/8 Pages) NEC

номер детали	2SC3582

подробное описание детали	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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3

2SC3582

0

2

1

5

4

3

7

6

0.5

1

5

10

50 70

IC-Collector Current-mA

NOISE FIGURE vs.

COLLECTOR CURRENT

VCE = 8 V

f = 1.0 GHz

S-PARAMETER

VCE = 8.0 V, IC = 5.0 mA, ZO = 50

f (MHz)

S11 S11

S21 S21

S12 S12

S22 S22

200

400

600

800

1000

1200

1400

1600

1800

2000

0.668

0.425

0.294

0.214

0.167

0.132

0.098

0.073

0.071

0.070

45.8

61.5

73.2

79.4

79.5

79.8

75.2

72.0

63.7

60.6

11.385

7.014

5.189

3.967

3.485

2.831

2.604

2.182

2.135

1.879

128.9

103.7

88.6

75.4

64.7

57.0

48.5

39.1

31.0

21.6

0.049

0.063

0.088

0.103

0.123

0.147

0.175

0.192

0.215

0.221

83.5

76.3

68.5

64.5

60.8

55.9

50.7

47.9

44.2

38.0

0.833

0.681

0.620

0.580

0.561

0.549

0.561

0.573

0.595

0.617

26.9

31.1

36.0

40.8

46.3

53.4

60.3

69.1

71.8

78.0

VCE = 8.0 V, IC = 20 mA, ZO = 50

f (MHz)

S11 S11

S21 S21

S12 S12

S22 S22

200

400

600

800

1000

1200

1400

1600

1800

2000

0.333

0.195

0.158

0.156

0.146

0.143

0.134

0.132

0.131

0.130

51.4

49.2

44.3

41.0

35.8

30.7

25.8

22.3

20.0

17.8

17.197

8.729

6.149

4.603

3.997

3.205

2.939

2.463

2.396

2.107

107.7

89.7

78.8

68.7

60.4

54.1

46.7

38.1

30.7

22.1

0.053

0.064

0.078

0.111

0.136

0.168

0.185

0.218

0.234

0.238

97.5

90.1

80.3

70.0

64.2

58.1

53.2

47.3

41.3

36.5

0.638

0.585

0.573

0.549

0.537

0.524

0.557

0.579

29.7

31.8

35.0

38.2

42.4

57.1

55.4

62.0

68.5

74.8

Аналогичный номер детали - 2SC3582

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Inchange Semiconductor ...	2SC3582	310Kb / 6P	Low Noise and High Gain

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