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2SC2668-R датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

номер детали 2SC2668-R
подробное описание детали  NPN Plastic-Encapsulated Transistor
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SC2668-R датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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2SC2668
0.02A , 40V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
09-Apr-2012 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
3
Base
1
Emitter
Collector
2
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Reverse Transfer Capacitance.
Low Noise Figure.
CLASSIFICATION OF hFE
Product-Rank
2SC2668-R
2SC2668-O
2SC2668-Y
Range
40~80
70~140
100~200
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
4
V
Collector Current - Continuous
IC
20
mA
Collector Power Dissipation
PC
200
mW
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
40
-
-
V
IC=100µA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
30
-
-
V
IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
4
-
-
V
IE=100µA, IC=0
Collector Cut–Off Current
ICBO
-
-
0.5
µ
A
VCB=40V, IE=0
Emitter Cut–Off Current
IEBO
-
-
0.5
µ
A
VEB=4V, IC=0
DC Current Gain
hFE
40
-
200
VCE=6V, IC=1mA
Reverse Transfer Capacitance
Cre
-
0.7
-
pF
VCE=6V, f=1MHz
Collector-Base Time Constant
CC rbb
-
-
30
pS
VCE=6V, IE= -1mA, f=30MHz
Transition Frequency
fT
-
550
-
MHz
VCE=6V, IC=1mA
Power Gain
Gpe
-
18
-
dB
VCC=6V, IC=1mA, f=100MHz
Noise Figure
NF
-
-
5
dB
TO-92S
REF.
Millimeter
Min.
Max.
A
3.90
4.10
B
3.05
3.25
C
1.42
1.62
D
15.1
15.5
E
2.97
3.27
F
0.66
0.86
G
2.44
2.64
H
1.27 REF.
J
0.36
0.48
K
0.36
0.51
L
45°


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