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2SC2668-R датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2668-R датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page 2SC2668 0.02A , 40V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente 09-Apr-2012 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Reverse Transfer Capacitance. Low Noise Figure. CLASSIFICATION OF hFE Product-Rank 2SC2668-R 2SC2668-O 2SC2668-Y Range 40~80 70~140 100~200 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 20 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=100µA, IC=0 Collector Cut–Off Current ICBO - - 0.5 µ A VCB=40V, IE=0 Emitter Cut–Off Current IEBO - - 0.5 µ A VEB=4V, IC=0 DC Current Gain hFE 40 - 200 VCE=6V, IC=1mA Reverse Transfer Capacitance Cre - 0.7 - pF VCE=6V, f=1MHz Collector-Base Time Constant CC • rbb - - 30 pS VCE=6V, IE= -1mA, f=30MHz Transition Frequency fT - 550 - MHz VCE=6V, IC=1mA Power Gain Gpe - 18 - dB VCC=6V, IC=1mA, f=100MHz Noise Figure NF - - 5 dB TO-92S REF. Millimeter Min. Max. A 3.90 4.10 B 3.05 3.25 C 1.42 1.62 D 15.1 15.5 E 2.97 3.27 F 0.66 0.86 G 2.44 2.64 H 1.27 REF. J 0.36 0.48 K 0.36 0.51 L 45° |
Аналогичный номер детали - 2SC2668-R |
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Аналогичное описание - 2SC2668-R |
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