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FDS-4465 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS-4465
подробное описание детали  P-Channel 1.8V Specified PowerTrench??MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS-4465 датащи(HTML) 2 Page - Fairchild Semiconductor

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FDS4465 Rev C2 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = –250
µA, Referenced to 25°C
–12
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.4
–0.6
–1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA, Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –13.5 A
VGS = –2.5 V,
ID = –12 A
VGS = –1.8 V,
ID = –10.5 A
VGS=–4.5 V, ID =–13.5A, TJ=125
°C
6.7
8.0
9.8
9.0
8.5
10.5
14
13
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–50
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –13.5 A
70
S
Dynamic Characteristics
Ciss
Input Capacitance
8237
pF
Coss
Output Capacitance
1497
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
20
36
ns
tr
Turn–On Rise Time
24
38
ns
td(off)
Turn–Off Delay Time
300
480
ns
tf
Turn–Off Fall Time
VDD = –10V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
140
224
ns
Qg
Total Gate Charge
86
120
nC
Qgs
Gate–Source Charge
20
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –13.5 A,
VGS = –4.5 V
11
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –2.1 A (Note 2)
–0.6
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105 °C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
Rg
Gate Resistance
750
pF
0.1
3.0
6.0
Ω


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