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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLR3715TRRPBF датащи(PDF) 2 Page - International Rectifier |
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IRLR3715TRRPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRLR/U3715PbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.9 1.3 V TJ = 25°C, IS = 21A, VGS = 0V ––– 0.8 ––– TJ = 125°C, IS = 21A, VGS = 0V trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = 21A, VR=20V Qrr Reverse Recovery Charge ––– 28 42 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 38 57 ns TJ = 125°C, IF = 21A, VR=20V Qrr Reverse Recovery Charge ––– 30 45 nC di/dt = 100A/µs Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 110 mJ IAR Avalanche Current ––– 21 A Avalanche Characteristics S D G Diode Characteristics 54 210 A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 26 ––– ––– S VDS = 10V, ID = 21A Qg Total Gate Charge ––– 11 17 ID = 21A Qgs Gate-to-Source Charge ––– 3.8 ––– nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 4.4 ––– VGS = 4.5V Qoss Output Gate Charge ––– 11 17 VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 6.4 ––– VDD = 10V tr Rise Time ––– 73 ––– ID = 21A td(off) Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω tf Fall Time ––– 5.1 ––– VGS = 4.5V Ciss Input Capacitance ––– 1060 ––– VGS = 0V Coss Output Capacitance ––– 700 ––– VDS = 10V Crss Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz VSD Diode Forward Voltage Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA ––– 11 14 VGS = 10V, ID = 26A ––– 15 20 VGS = 4.5V, ID = 21A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
Аналогичный номер детали - IRLR3715TRRPBF |
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Аналогичное описание - IRLR3715TRRPBF |
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