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IRLZ44NS датащи(PDF) 2 Page - International Rectifier |
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IRLZ44NS датащи(HTML) 2 Page - International Rectifier |
2 / 11 page IRLZ44NS/L Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.022 VGS = 10V, ID = 25A ––– ––– 0.025 Ω VGS = 5.0V, ID = 25A ––– ––– 0.035 VGS = 4.0V, ID = 21A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 21 ––– ––– S VDS = 25V, ID = 25A ––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 48 ID = 25A Qgs Gate-to-Source Charge ––– ––– 8.6 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 28V tr Rise Time ––– 84 ––– ID = 25A td(off) Turn-Off Delay Time ––– 26 ––– RG = 3.4Ω, VGS = 5.0V tf Fall Time ––– 15 ––– RD = 1.1Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 1700 ––– VGS = 0V Coss Output Capacitance ––– 400 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS RDS(on) Static Drain-to-Source On-Resistance LS Internal Source Inductance 7.5 ns IDSS Drain-to-Source Leakage Current µA Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 25A Qrr Reverse Recovery Charge ––– 210 320 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics S D G A 47 160 Pulse width ≤ 300µs; duty cycle ≤ 2%. Notes:
Uses IRLZ44N data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. I SD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C V DD = 25V, starting TJ = 25°C, L =470µH RG = 25Ω, IAS = 25A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) |
Аналогичный номер детали - IRLZ44NS |
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Аналогичное описание - IRLZ44NS |
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