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STP76NF75 датащи(PDF) 4 Page - STMicroelectronics |
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STP76NF75 датащи(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STB76NF75, STI76NF75, STP76NF75 4/15 Doc ID 13780 Rev 2 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 75 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS , ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A 0.0095 0.011 W Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID = 40 A - 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 3700 730 240 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 60 V, ID = 80 A VGS =10 V - 117 27 47 160 nC nC nC |
Аналогичный номер детали - STP76NF75 |
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Аналогичное описание - STP76NF75 |
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