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FQD8P10 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FQD8P10 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page November 2013 FQD8P10 / FQU8P10 P-Channel QFET® MOSFET -100 V, -6.6 A, 530 mΩ Description ©2010 Fairchild Semiconductor Corporation FQD8P10 / FQU8P10 Rev. C2 www.fairchildsemi.com 1 This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FQD8P10TM FQU8P10TU Unit RJC Thermal Resistance, Junction to Case, Max. 2.84 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 • -6.6 A, -100 V, RDS(on) = 530 mΩ (Max) @ VGS = -10 V, ID = -3.3 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested G D S I-PAK D-PAK G S D G S D Symbol Parameter FQD8P10TM / FQU8P10TU Unit VDSS Drain-Source Voltage -100 V ID Drain Current - Continuous (TC = 25°C) -6.6 A - Continuous (TC = 100°C) -4.2 A IDM Drain Current - Pulsed (Note 1) -26.4 A VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ IAR Avalanche Current (Note 1) -6.6 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 44 W - Derate above 25°C 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C |
Аналогичный номер детали - FQD8P10 |
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Аналогичное описание - FQD8P10 |
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