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FQD8P10 датащи(PDF) 1 Page - Fairchild Semiconductor

номер детали FQD8P10
подробное описание детали  P-Channel QFET짰 MOSFET -100 V, -6.6 A, 530 m廓
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD8P10 датащи(HTML) 1 Page - Fairchild Semiconductor

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November 2013
FQD8P10 / FQU8P10
P-Channel QFET® MOSFET
-100 V, -6.6 A, 530 mΩ
Description
©2010 Fairchild Semiconductor Corporation
FQD8P10 / FQU8P10 Rev. C2
www.fairchildsemi.com
1
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
Absolute Maximum Ratings T
C = 25
oC unless otherwise noted.
Thermal Characteristics
Symbol
Parameter
FQD8P10TM
FQU8P10TU
Unit
RJC
Thermal Resistance, Junction to Case, Max.
2.84
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
110
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
50
• -6.6 A, -100 V, RDS(on) = 530 mΩ (Max) @ VGS = -10 V,
ID = -3.3 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
G
D
S
I-PAK
D-PAK
G
S
D
G
S
D
Symbol
Parameter
FQD8P10TM / FQU8P10TU
Unit
VDSS
Drain-Source Voltage
-100
V
ID
Drain Current
- Continuous (TC = 25°C)
-6.6
A
- Continuous (TC = 100°C)
-4.2
A
IDM
Drain Current
- Pulsed
(Note 1)
-26.4
A
VGSS
Gate-Source Voltage
30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
150
mJ
IAR
Avalanche Current
(Note 1)
-6.6
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-6.0
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
44
W
- Derate above 25°C
0.35
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C


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