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L6204D013TR датащи(PDF) 5 Page - STMicroelectronics |
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L6204D013TR датащи(HTML) 5 Page - STMicroelectronics |
5 / 12 page 5/12 L6204 CROSS CONDUCTION Although the device guarantees the absence of cross-conduction, the presence of the intrinsic diodes in the POWER DMOS structure causes the generation of current spikes on the sensing terminals. This is due to charge-discharge phenomena in the capacitors C1 & C2 associated with the drain source junctions (fig. 1). When the output switches from high to low, a current spike is generated associated with the capacitor C1. On the low-to-high transition a spike of the same polarity is generated by C2, preceded by a spike of the opposite polarity due to the charging of the input capacity of the lower POWER DMOS transistor (see fig. 2). Figure 1. Intrinsic Structures in the POWER MOS Transistors Figure 2. Current Typical Spikes on the Sensing Pin Obsolete Product(s) - Obsolete Product(s) |
Аналогичный номер детали - L6204D013TR |
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Аналогичное описание - L6204D013TR |
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